ALD 2017 Student Awards
ALD student awards have been established to recognize outstanding research performed by a graduate student in areas of interest to Atomic Layer Deposition.
Five ALD Student Finalists will be chosen. ALD Student Finalists will receive a $500 award upon completing the competition. Competition for the award requires attendance at ALD 2017 and a student presentation of the work in an oral session.
The ALD Best Student Paper Award winner will be selected on the basis of the oral presentation, considering quality of research and clarity of presentation. The award is sponsored by Lam Research and consists of a $1,000 cash prize and a certificate.A few ALD Poster Awards will be given as well.
To apply, please send a copy of the ALD 2017 abstract that has already been submitted, reprints/preprints of the work, and a letter of recommendation from the adviser to Della Miller, della@avs.org, by May 1, 2017.
Best ALD 2017 Student Paper Award ($1,000)
- NS+EM‐SuA17-“Tertiary Butyl Hydrazine as a Reducing Agent for Low‐Temperature Atomic Layer Deposition of Low‐Resistivity Copper Thin Films,” Katja Väyrynen, K. Mizohata, J. Räisänen, University of Helsinki, Finland; D. Peeters, A. Devi, Ruhr‐University Bochum, Germany; M. Ritala, M. Leskelä, University of Helsinki, Finland (Sunday, July 16, 5:30pm, Room Plaza ABC)
Best ALD 2017 Student Paper Award Finalists ($500)
- NS+EM‐SuA1 – “Plasma‐enhanced Atomic Layer Deposition of Large‐area MoS2: From 2‐D Monolayers to 3‐D Vertical Fins,” Akhil Sharma, S. Karwal, V. Vandalon, M. Verheijen, Eindhoven University of Technology, Netherlands; H. Knoops, R. Sundaram, Oxford Instruments Plasma Technology; W.M.M. Kessels, A. Bol, Eindhoven University of Technology, Netherlands (Sunday, July 16, 1:30pm, Room Plaza ABC)
- AA‐MoM13- “High‐Efficiency Perovskite Solar Cells with Humidity‐Stability beyond 60 Days Achieved via Atomic Layer Deposition,” Dibyashree Koushik, Y. Kuang, Eindhoven University of Technology, Netherlands; V. Zardetto, TNO‐Solliance, High Tech Campus, Netherlands; W. Verhees, S. Veenstra, ECNSolliance, High Tech Campus, Netherlands; M. Verheijen, W.M.M. Kessels, M. Creatore, R. Schropp, Eindhoven University of Technology, Netherlands (Monday, July 17, 11:00am, Room Plaza ABC)
- EM+AA‐MoA3 – “Atomic/molecular Layer Deposition of Luminescent Inorganic‐Organic Hybrid Erbium Pyridine Dicarboxylate Thin Films,” Lukas Mai, Ruhr‐University Bochum, Germany; Z. Giedraityte, Aalto University, Finland; Schmidt, D. Rogalla, S. Scholz, A. Wieck, Ruhr‐University Bochum, Germany; M. Karppinen, Aalto University, Finland; A. Devi, Ruhr‐University Bochum, Germany (Monday, July 17, 2:00pm, Room Plaza E)
- AA2‐TuA12 – “Investigation of High‐quality Silicon Nitride (SiNx) Thin Film Grown by Low‐temperature Hollow Cathode Plasma‐Enhanced ALD as a Gate Dielectric for AlGaN/GaN MIS‐HEMTs”, Xin Meng, Y.‐C. Byun, J.‐G. Lee, H. Kim, J. Lee, A. Lucero, L. Cheng, J. Kim, University of Texas at Dallas (Tuesday, July 18, 4:15pm, Room Plaza E)
Best ALD 2017 Student Poster Award
- EM-MoP14 – “Sub-10 nm Scalable Hybrid Dielectric Engineering on MoS2 for 2D Materials Based Devices,” Lanxia Cheng, J. Lee, H. Zhu, A.V. Ravichandran, Q. Wang, A. Lucero, M. Kim, R. Wallace, University of Texas at Dallas; L. Colombo, Texas Instruments, USA; J. Kim, University of Texas at Dallas
ALE 2017 Student Awards
For the first time, ALE is pleased to offer an ALE Student Award (poster or oral). The ALE Student Award has been established to recognize outstanding research performed by a graduate student in areas of interest to Atomic Layer Etching. The award consists of a $500 cash prize and a certificate.
To apply, please send a copy of the ALE 2017 abstract that has already been submitted, reprints/preprints of the work, and a letter of recommendation from the adviser to Della Miller, della@avs.org, by May 1, 2017.
Best ALE 2017 Student Oral Award
- ALE-MoM8 – “Reactor Scale Uniformity Enabled by Atomic Layer Etching,” Chad Huard, S. Lanham, M. Kushner, University of Michigan
Best ALE 2017 Student Poster Award
- ALE-SaP18 _ “Atomic Layer Etching of Amorphous Silicon with Selectivity Towards MoS2,” Markus Heyne, KU Leuven, Belgium; A. Goodyear, Oxford Instruments Plasma Technology, UK; J.-F. de Marneffe, IMEC, Belgium; M. Cooke, Oxford Instruments Plasma Technology, UK; I. Radu, IMEC, Belgium; E. Neyts, University of Antwerp, Belgium; S. De Gendt, KU Leuven, Belgium